MASPOWER MS3N100HGT1

MASPOWER · FETs & Power MOSFETs · MPN MS3N100HGT1

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Specifications

Gate Charge(Qg)12nC
Drain to Source Voltage1kV
Output Capacitance(Coss)45pF
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation74W
Reverse Transfer Capacitance (Crss@Vds)5.5pF
RDS(on)5.2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)390pF

Technical details

1kV 3A Through Hole TO-220F

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