MASPOWER · FETs & Power MOSFETs · MPN MS3N100HGD1
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| Gate Charge(Qg) | 12nC |
|---|---|
| Drain to Source Voltage | 1kV |
| Current - Continuous Drain(Id) | 3A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 50W |
| Reverse Transfer Capacitance (Crss@Vds) | 5.5pF |
| RDS(on) | 5.2Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 390pF |
N-Channel 1kV 3A 50W Through Hole TO-251