MASPOWER MS3N100HGD0

MASPOWER · FETs & Power MOSFETs · MPN MS3N100HGD0

No reviews yet — be the first to review MASPOWER MS3N100HGD0.

Specifications

Output Capacitance(Coss)-
Pd - Power Dissipation50W
Configuration-
Gate Charge(Qg)12nC
Drain to Source Voltage1kV
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Reverse Transfer Capacitance (Crss@Vds)5.5pF
RDS(on)5.2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)390pF

Technical details

N-Channel 1kV 3A 50W Surface Mount TO-252

Related FETs & Power MOSFETs