MASPOWER MS33N20HGC0

MASPOWER · FETs & Power MOSFETs · MPN MS33N20HGC0

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Specifications

Configuration-
Gate Charge(Qg)158nC@10V
Drain to Source Voltage200V
Current - Continuous Drain(Id)33A
Operating Temperature --65℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation180W
RDS(on)85mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)120pF
Number1 N-channel
Input Capacitance(Ciss)2.85nF

Technical details

N-Channel 200V 33A 180W Through Hole TO-247

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