MASPOWER MS20N85ICT1

MASPOWER · FETs & Power MOSFETs · MPN MS20N85ICT1

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Specifications

Configuration-
Gate Charge(Qg)54.9nC
Drain to Source Voltage850V
Output Capacitance(Coss)56.81pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation68W
Reverse Transfer Capacitance (Crss@Vds)5.2pF
RDS(on)380mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.4684nF

Technical details

850V 20A 68W Through Hole TO-220F

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