MASPOWER MS1N250HGC0

MASPOWER · FETs & Power MOSFETs · MPN MS1N250HGC0

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Specifications

Drain to Source Voltage2.5kV
Gate Charge(Qg)7.4nC
Output Capacitance(Coss)8pF
Current - Continuous Drain(Id)1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))6.5V
Pd - Power Dissipation291W
Reverse Transfer Capacitance (Crss@Vds)3pF
RDS(on)30Ω@10V
Number1 N-channel
Input Capacitance(Ciss)116pF

Technical details

2.5kV 1A 291W Through Hole TO-247

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