MASPOWER MS18N100HGC0

MASPOWER · FETs & Power MOSFETs · MPN MS18N100HGC0

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Specifications

Configuration-
Gate Charge(Qg)66.64nC@10V
Drain to Source Voltage1kV
Output Capacitance(Coss)290pF
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation470W
RDS(on)550mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)30pF
Number1 N-channel
Input Capacitance(Ciss)2.84nF

Technical details

N-Channel 1kV 18A 470W Through Hole TO-247

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