MASPOWER MS18N100HCC0

MASPOWER · FETs & Power MOSFETs · MPN MS18N100HCC0

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Specifications

Gate Charge(Qg)28nC@10V
Drain to Source Voltage1kV
Current - Continuous Drain(Id)18A
Output Capacitance(Coss)90pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation312W
Reverse Transfer Capacitance (Crss@Vds)13pF
RDS(on)370mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.8nF

Technical details

1kV 18A 4V 312W 370mΩ@10V 1 N-channel TO-247 Single FETs, MOSFETs RoHS

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