MASPOWER MS10N120HGT1

MASPOWER · FETs & Power MOSFETs · MPN MS10N120HGT1

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Specifications

Gate Charge(Qg)41nC@10V
Drain to Source Voltage1.2kV
Output Capacitance(Coss)153pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5.5V
Pd - Power Dissipation67.9W
Reverse Transfer Capacitance (Crss@Vds)9pF
RDS(on)2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.871nF
TypeN-Channel

Technical details

1.2kV 10A 67.9W Through Hole TO-220F

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