MASPOWER · FETs & Power MOSFETs · MPN MS10N100HGT1
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| Gate Charge(Qg) | 43nC@10V |
|---|---|
| Drain to Source Voltage | 1kV |
| Output Capacitance(Coss) | 189pF |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.3V |
| Pd - Power Dissipation | 67.9W |
| RDS(on) | 1.45Ω@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.15nF |
| Type | N-Channel |
1kV 10A Through Hole TO-220