MASPOWER MS10N100HGC0

MASPOWER · FETs & Power MOSFETs · MPN MS10N100HGC0

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Specifications

Configuration-
Gate Charge(Qg)43nC@10V
Drain to Source Voltage1kV
Output Capacitance(Coss)189pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation186.5W
RDS(on)1.45Ω@10V
Reverse Transfer Capacitance (Crss@Vds)13pF
Number1 N-channel
Input Capacitance(Ciss)2.15nF

Technical details

N-Channel 1kV 10A Through Hole TO-247

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