MASPOWER · FETs & Power MOSFETs · MPN MS10N100HCT1
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| Gate Charge(Qg) | 15nC@10V |
|---|---|
| Drain to Source Voltage | 1kV |
| Current - Continuous Drain(Id) | 10A |
| Output Capacitance(Coss) | 30pF |
| Gate Threshold Voltage (Vgs(th)) | 4.1V |
| Pd - Power Dissipation | 36W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.5pF |
| RDS(on) | 960mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 440pF |
1kV 10A 4.1V 36W 960mΩ@10V 1 N-channel TO-220F Single FETs, MOSFETs RoHS