MASPOWER · FETs & Power MOSFETs · MPN MS100N60ICC0
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| Gate Charge(Qg) | 170nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 100A |
| Output Capacitance(Coss) | 181pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 1.041kW |
| RDS(on) | 33.5mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 12.4pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.395nF |
| Type | N-Channel |
650V 100A 3.8V 1.041kW 33.5mΩ@10V 1 N-channel N-Channel TO-247 Single FETs, MOSFETs RoHS