MASPOWER MS100N20IDT0

MASPOWER · FETs & Power MOSFETs · MPN MS100N20IDT0

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Specifications

Gate Charge(Qg)130nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)392pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation375W
RDS(on)25mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)165pF
Number1 N-channel
Input Capacitance(Ciss)5.871nF

Technical details

N-Channel 200V 100A 375W Through Hole TO-220

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