MagnaChip Semicon · FETs & Power MOSFETs · MPN MMIS90R1K4PTH
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| Output Capacitance(Coss) | 438pF |
|---|---|
| Pd - Power Dissipation | 83W |
| Drain to Source Voltage | 900V |
| Configuration | - |
| Gate Charge(Qg) | 13.6nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| RDS(on) | 1.26Ω@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 14pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 474pF |
83W 900V 3V 1.26Ω@10V 1 N-channel N-Channel TO-251 Single FETs, MOSFETs RoHS