MagnaChip Semicon MDU1721VRH

MagnaChip Semicon · FETs & Power MOSFETs · MPN MDU1721VRH

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)113.8nC@10V
Output Capacitance(Coss)200pF
Current - Continuous Drain(Id)204.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation96.2W
RDS(on)1.1mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)1.85nF
Number1 N-channel
Input Capacitance(Ciss)7.45nF
TypeN-Channel

Technical details

40V 204.1A 3V 96.2W 1.1mΩ@10V 1 N-channel N-Channel PDFN56 Single FETs, MOSFETs RoHS

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