MagnaChip Semicon MDU04N010VRH

MagnaChip Semicon · FETs & Power MOSFETs · MPN MDU04N010VRH

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Specifications

Gate Charge(Qg)103.5nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)100A
Output Capacitance(Coss)2.058nF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation96.2W
RDS(on)0.8mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)147pF
Number1 N-channel
Input Capacitance(Ciss)6.892nF
TypeN-Channel

Technical details

40V 100A 2V 96.2W 0.8mΩ@10V 1 N-channel N-Channel PDFN56 Single FETs, MOSFETs RoHS

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