MagnaChip Semicon · FETs & Power MOSFETs · MPN MDT10N023RH
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| Output Capacitance(Coss) | 1.367nF |
|---|---|
| Pd - Power Dissipation | 441W |
| Configuration | - |
| Gate Charge(Qg) | 167nC |
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| RDS(on) | 1.85mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 36pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 12.536nF |
441W 100V 2.8V 1.85mΩ@10V 1 N-channel N-Channel TOLL Single FETs, MOSFETs RoHS