MagnaChip Semicon MDT08N017RH

MagnaChip Semicon · FETs & Power MOSFETs · MPN MDT08N017RH

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Specifications

Gate Charge(Qg)183nC@10V
Drain to Source Voltage80V
Current - Continuous Drain(Id)300A
Output Capacitance(Coss)2.338nF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.1V
Pd - Power Dissipation469W
Reverse Transfer Capacitance (Crss@Vds)65pF
RDS(on)1.3mΩ@10V
Input Capacitance(Ciss)12.684nF
TypeN-Channel

Technical details

80V 300A 3.1V 469W 1.3mΩ@10V N-Channel TOLL-8 Single FETs, MOSFETs RoHS

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