MagnaChip Semicon MDP1933TH

MagnaChip Semicon · FETs & Power MOSFETs · MPN MDP1933TH

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Specifications

Output Capacitance(Coss)651.7pF
Pd - Power Dissipation157W
Configuration-
Gate Charge(Qg)59.4nC
Drain to Source Voltage80V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Reverse Transfer Capacitance (Crss@Vds)34.2pF
RDS(on)5.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.841nF

Technical details

157W 80V 2V 5.5mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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