MagnaChip Semicon · FETs & Power MOSFETs · MPN MDP10N055TH
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| Gate Charge(Qg) | 78nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 1.108nF |
| Current - Continuous Drain(Id) | 130A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 188W |
| Reverse Transfer Capacitance (Crss@Vds) | 47pF |
| RDS(on) | 4.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.429nF |
| Type | N-Channel |
100V 130A 4V 188W 4.4mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS