MagnaChip Semicon MDF13N65BTH

MagnaChip Semicon · FETs & Power MOSFETs · MPN MDF13N65BTH

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Specifications

Gate Charge(Qg)54nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)12.8pF
Current - Continuous Drain(Id)14A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation36.7W
Reverse Transfer Capacitance (Crss@Vds)243pF
RDS(on)400mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.4nF
TypeN-Channel

Technical details

650V 14A 4V 36.7W 400mΩ@10V 1 N-channel N-Channel TO-220F Single FETs, MOSFETs RoHS

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