MagnaChip Semicon MDES08N019RH

MagnaChip Semicon · FETs & Power MOSFETs · MPN MDES08N019RH

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)172nC@10V
Current - Continuous Drain(Id)180A
Output Capacitance(Coss)2.634nF
Gate Threshold Voltage (Vgs(th))3.8V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)1.6mΩ@10V
Input Capacitance(Ciss)12.025nF

Technical details

80V 180A 3.8V 300W 1.6mΩ@10V D2PAK-7L Single FETs, MOSFETs RoHS

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