MagnaChip Semicon MDE1991RH

MagnaChip Semicon · FETs & Power MOSFETs · MPN MDE1991RH

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Specifications

Output Capacitance(Coss)1.36nF
Pd - Power Dissipation223W
Configuration-
Drain to Source Voltage100V
Gate Charge(Qg)115nC
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.9V
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)3.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.3nF

Technical details

223W 100V 2.9V 3.7mΩ@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs RoHS

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