MagnaChip Semicon MDE1932RH

MagnaChip Semicon · FETs & Power MOSFETs · MPN MDE1932RH

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)116nC@10V
Current - Continuous Drain(Id)175A
Output Capacitance(Coss)50pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation209W
Reverse Transfer Capacitance (Crss@Vds)1.54nF
RDS(on)3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.2nF
TypeN-Channel

Technical details

80V 175A 4V 209W 3mΩ@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs RoHS

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