MagnaChip Semicon · FETs & Power MOSFETs · MPN MDE10N026RH
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| Output Capacitance(Coss) | 2.05nF |
|---|---|
| Pd - Power Dissipation | 416W |
| Configuration | - |
| Drain to Source Voltage | 100V |
| Gate Charge(Qg) | 147nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| RDS(on) | 2.3mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 36pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 10.42nF |
416W 100V 2V 2.3mΩ@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs RoHS