MagnaChip Semicon · FETs & Power MOSFETs · MPN MDD1951RH
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| Gate Charge(Qg) | 4.8nC@4.5V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 17.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 32.8W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 55mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
| Type | - |
60V 17.9A 3V 32.8W 55mΩ@4.5V 1 N-channel TO-252-2(DPAK) Single FETs, MOSFETs RoHS