MagnaChip Semicon MDD1902RH

MagnaChip Semicon · FETs & Power MOSFETs · MPN MDD1902RH

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)39.8nC@10V
Output Capacitance(Coss)230pF
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation83W
RDS(on)21mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)82pF
Input Capacitance(Ciss)2.087nF

Technical details

100V 40A 3V 83W 21mΩ@10V TO-252(DPAK) Single FETs, MOSFETs RoHS

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