MagnaChip Semicon MDD14N25CRH

MagnaChip Semicon · FETs & Power MOSFETs · MPN MDD14N25CRH

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Specifications

Gate Charge(Qg)20nC@10V
Drain to Source Voltage250V
Output Capacitance(Coss)142pF
Current - Continuous Drain(Id)10.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation69.4W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)280mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)741pF
TypeN-Channel

Technical details

250V 10.2A 4V 69.4W 280mΩ@10V 1 N-channel N-Channel TO-252-2(DPAK) Single FETs, MOSFETs RoHS

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