MACOM · FETs & Power MOSFETs · MPN NPT1012B
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| Drain to Source Voltage | 100V |
|---|---|
| Configuration | - |
| Current - Continuous Drain(Id) | - |
| RDS(on) | 550mΩ@2V |
| Type | - |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Operating Temperature | -40℃~+85℃ |
| Pd - Power Dissipation | 44W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Input Capacitance(Ciss) | - |
| Gate Charge(Qg) | - |
| Output Capacitance(Coss) | - |
100V 550mΩ@2V 2.3V 44W RF FETs, MOSFETs RoHS