MACOM NPT1004D

MACOM · FETs & Power MOSFETs · MPN NPT1004D

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Specifications

Drain to Source Voltage100V
Current - Continuous Drain(Id)-
RDS(on)300mΩ@2V
TypeN-Channel
Gate Threshold Voltage (Vgs(th))1.3V
Pd - Power Dissipation40W
Operating Temperature-40℃~+85℃
Reverse Transfer Capacitance (Crss@Vds)-
Input Capacitance(Ciss)-
Gate Charge(Qg)-
Output Capacitance(Coss)-

Technical details

100V 300mΩ@2V 1.3V 40W SOIC-8-EP RF FETs, MOSFETs RoHS

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