MACOM · FETs & Power MOSFETs · MPN NPT1004D
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| Drain to Source Voltage | 100V |
|---|---|
| Current - Continuous Drain(Id) | - |
| RDS(on) | 300mΩ@2V |
| Type | N-Channel |
| Gate Threshold Voltage (Vgs(th)) | 1.3V |
| Pd - Power Dissipation | 40W |
| Operating Temperature | -40℃~+85℃ |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Input Capacitance(Ciss) | - |
| Gate Charge(Qg) | - |
| Output Capacitance(Coss) | - |
100V 300mΩ@2V 1.3V 40W SOIC-8-EP RF FETs, MOSFETs RoHS