MACOM · FETs & Power MOSFETs · MPN CG2H40010F
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| Drain to Source Voltage | 120V |
|---|---|
| Current - Continuous Drain(Id) | 1.5A |
| Type | N-Channel |
| RDS(on) | - |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Technology | D-mode |
| Operating Temperature | -40℃~+150℃ |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 0.186pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
| Gate Charge(Qg) | - |
120V 1.5A 3V 1 N-channel SMD RF FETs, MOSFETs RoHS