LRC S-LNP2010DT2AG

LRC · FETs & Power MOSFETs · MPN S-LNP2010DT2AG

4.0/5 from 1 engineer review.

Specifications

Gate Charge(Qg)13.9nC@10V;6.8nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)91pF;62.8pF
Current - Continuous Drain(Id)4.7A;6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))850mV;1.2V
Pd - Power Dissipation1.38W
Reverse Transfer Capacitance (Crss@Vds)84pF;59.6pF
RDS(on)50mΩ
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)751pF;636pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 20V Surface Mount DFN2020-6D

Reviews

Related FETs & Power MOSFETs