LRC S-LDTD123YLT1G

LRC · Transistors (BJTs) · MPN S-LDTD123YLT1G

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Specifications

Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain56
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃
Output Voltage(VO(on))300mV@50mA,2.5mA
Input Resistor2.2kΩ
Number1 NPN (Pre-Biased)
typeNPN
Resistor Ratio4.5
Pd - Power Dissipation200mW
Input Voltage (VI(on)@Ic,Vce)2V@20mA,0.3V

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 500mA 200mW Surface Mount SOT-23

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