LRC S-LDTD113ZLT1G

LRC · Transistors (BJTs) · MPN S-LDTD113ZLT1G

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Specifications

Current - Collector Cutoff500nA
Collector - Emitter Voltage VCEO50V
DC Current Gain82
Vce Saturation(VCE(sat))300mV
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃
Output Voltage(VO(on))300mV
Input Resistor1kΩ
Resistor Ratio10
Pd - Power Dissipation225mW
Input Voltage (VI(on)@Ic,Vce)1.5V@20mA,0.3V
Voltage - Input(Max)(VI(off))300mV@100uA,5V

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 500mA 225mW Surface Mount TO-236

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