LRC · FETs & Power MOSFETs · MPN LSI1012DW1T1G
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| Output Capacitance(Coss) | 9.8pF |
|---|---|
| Pd - Power Dissipation | 245mW |
| Gate Charge(Qg) | 880pC |
| Configuration | - |
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 900mA |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 650mV |
| RDS(on) | 250mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 7.6pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 60.7pF |
245mW 20V 900mA 650mV 250mΩ@4.5V 1 N-channel N-Channel SC-88 Single FETs, MOSFETs RoHS