LRC LSI1012BN3T5G

LRC · FETs & Power MOSFETs · MPN LSI1012BN3T5G

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Specifications

Gate Charge(Qg)680pC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)600mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))530mV
Pd - Power Dissipation360mW
RDS(on)250mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)7pF
Number1 N-channel
Input Capacitance(Ciss)83pF

Technical details

20V 600mA 530mV 360mW 250mΩ@4.5V 1 N-channel SOT-883 Single FETs, MOSFETs RoHS

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