LRC LP4435T1G

LRC · FETs & Power MOSFETs · MPN LP4435T1G

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Specifications

Gate Charge(Qg)19nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)9.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation3.1W
RDS(on)37mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)151pF
Number1 P-Channel
Input Capacitance(Ciss)1.539nF
TypeP-Channel

Technical details

P-Channel 30V 9.5A 3.1W Surface Mount SOP-8

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