LRC LMUN5316DW1T1G

LRC · Transistors (BJTs) · MPN LMUN5316DW1T1G

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Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO50V
DC Current Gain160
Vce Saturation(VCE(sat))250mV
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Output Voltage(VO(on))200mV
Input Resistor4.7kΩ
typeNPN+PNP
Resistor Ratio-
Number1 NPN Pre-Biased, 1 PNP Pre-Biased
Pd - Power Dissipation250mW

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 250mW Surface Mount SOT-363

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