LRC LMBT6427LT1G

LRC · Transistors (BJTs) · MPN LMBT6427LT1G

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Specifications

Current - Collector Cutoff50nA
Vbe Saturation(VBE(sat))2V
Vbe On(VBE(on))1.75V
Transition frequency(fT)-
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO12V
DC Current Gain-
Pd - Power Dissipation225mW;300mW
typeNPN
Current - Collector(Ic)500mA
Vce Saturation(VCE(sat))1.2V;1.5V
Operating Temperature-

Technical details

Bipolar (BJT) Transistor NPN 40V 500mA 225mW Surface Mount SOT-23

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