LRC LDTC114TET1G

LRC · Transistors (BJTs) · MPN LDTC114TET1G

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Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO50V
DC Current Gain160
Vce Saturation(VCE(sat))250mV
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Output Voltage(VO(on))200mV
Input Resistor10kΩ
typeNPN
Resistor Ratio1
Number1 NPN (Pre-Biased)
Pd - Power Dissipation300mW

Technical details

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 50V 100mA 300mW Surface Mount SC-89

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