LRC LBC856BWT1G

LRC · Transistors (BJTs) · MPN LBC856BWT1G

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Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO65V
DC Current Gain220
Pd - Power Dissipation150mW
Number1 PNP
typePNP
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))650mV

Technical details

Bipolar (BJT) Transistor PNP 65V 100mA 100MHz 150mW Surface Mount SC-70

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