LONTEN LSD65R930GT

LONTEN · FETs & Power MOSFETs · MPN LSD65R930GT

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Specifications

Gate Charge(Qg)13.6nC@10V
Configuration-
Drain to Source Voltage650V
Output Capacitance(Coss)15.9pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation29W
Reverse Transfer Capacitance (Crss@Vds)1.73pF
RDS(on)930mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)349pF

Technical details

N-Channel 650V 4A Through Hole TO-220F-3

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