LONTEN LNE10N65

LONTEN · FETs & Power MOSFETs · MPN LNE10N65

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Specifications

Gate Charge(Qg)34.2nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)144.2pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation130W
Reverse Transfer Capacitance (Crss@Vds)6.8pF
RDS(on)1Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.622nF
TypeN-Channel

Technical details

N-Channel 650V 10A 130W Surface Mount TO-263

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