LONTEN · FETs & Power MOSFETs · MPN LND18N50
5.0/5 from 1 engineer review.
| Gate Charge(Qg) | 50.5nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 54W |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| RDS(on) | 280mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.045nF |
N-Channel 500V 18A 54W Through Hole TO-220F