Littelfuse/IXYS · FETs & Power MOSFETs · MPN IXTN200N10T
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| Gate Charge(Qg) | 152nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 200A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 550W |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF |
| RDS(on) | 5.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9.4nF |
| Type | N-Channel |
100V 200A 4.5V 550W 5.5mΩ@10V 1 N-channel N-Channel SOT-227B Single FETs, MOSFETs RoHS