Littelfuse/IXYS IXTA1N200P3HV

Littelfuse/IXYS · FETs & Power MOSFETs · MPN IXTA1N200P3HV

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Specifications

Gate Charge(Qg)23.5nC@10V
Drain to Source Voltage2kV
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation125W
RDS(on)40Ω@10V
Number1 N-channel
Input Capacitance(Ciss)646pF
TypeN-Channel

Technical details

2kV 3A 4V 125W 40Ω@10V 1 N-channel N-Channel TO-263AA Single FETs, MOSFETs RoHS

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