LGE · Transistors (BJTs) · MPN UMD10N
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| Transition frequency(fT) | 250MHz |
|---|---|
| DC Current Gain | 80 |
| Current - Collector(Ic) | 100mA |
| Output Voltage(VO(on)) | 300mV@5mA,250uA |
| Input Resistor | 2.2kΩ |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
| type | NPN+PNP |
| Resistor Ratio | 21 |
| Pd - Power Dissipation | 200mW |
| Input Voltage (VI(on)@Ic,Vce) | 1.1V@5mA,300mV |
Pre-Biased Bipolar Transistor (BJT) 0.2W Surface Mount SOT-363