LGE SI2333

LGE · FETs & Power MOSFETs · MPN SI2333

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Specifications

Drain to Source Voltage12V
Gate Charge(Qg)7.6nC@4.5V
Output Capacitance(Coss)94pF
Current - Continuous Drain(Id)4.2A
Gate Threshold Voltage (Vgs(th))600mV
Pd - Power Dissipation1.25W
Reverse Transfer Capacitance (Crss@Vds)76pF
RDS(on)30mΩ@4.5V;36mΩ@3.3V
Number1 P-Channel
Input Capacitance(Ciss)760pF
TypeP-Channel

Technical details

12V 4.2A 600mV 1.25W 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS

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