LGE LGE3M80120Q

LGE · FETs & Power MOSFETs · MPN LGE3M80120Q

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Specifications

Drain to Source Voltage1.2kV
Gate Charge(Qg)76nC
Current - Continuous Drain(Id)42A
Output Capacitance(Coss)69pF
Operating Temperature --55℃~+175℃
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)6.7pF
RDS(on)100mΩ
Number1 N-channel
Input Capacitance(Ciss)1.68nF
TypeN-Channel

Technical details

1.2kV 42A 300W 100mΩ 1 N-channel N-Channel TO-247-4 Single FETs, MOSFETs RoHS

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